Flexible, transparent and inorganic resistive memory based on

BaTi0.95Co0.05O3 film


Yuxi Yang, Guoliang Yuan*, Zhibo Yan, Yaojin Wang, Xubing Lu and Jun-Ming Liu*

* Corresponding author, Email: yuanguoliang@njust.edu.cn and liujm@nju.edu.cn

Advanced Materials 29, 1700425 (2017). https://doi.org/10.1002/adma.201700425

 

Abstract: Perovskite ceramics and single crystals are commonly hard and brittle due to their small maximum elastic strain. Here the large-scale BaTi0.95Co0.05O3 (BTCO) film with SrRuO3 (SRO) buffered layer on the 10-mm-thick mica substrate is flexible with a small bending radius of 1.4 mm and transparent for visible lights with 500-800 nm wavelengths. Mica/SRO/BTCO/Au cells show bipolar resistive switching and the high/low resistance ratio is up to 50. The resistive switching properties do not show obvious change after the memory with 2.2 mm bending radius underwent write/erase for 360, 000 cycles or it was bent to 3 mm radius for 10, 000 times. Most importantly, the memory works properly at 20-180 °C or after it was annealed at 500 °C. The flexible and transparent oxide resistive memory has good prospect to be applied in smart wearable devices and flexible display screens.